Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb
Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and annea...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4842355 |