Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed. The conventional 6T TFET SRAM cell is designed using DG TFET of 30 nm. For the circu...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9116958/ |