Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs
An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7089170/ |