Superconductivity in heavily boron-doped silicon carbide
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can em...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2008-01-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://dx.doi.org/10.1088/1468-6996/9/4/044205 |