DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold swing (SS). The simulations results of proposed...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte
2018-02-01
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| Series: | Holos |
| Subjects: | |
| Online Access: | http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173 |