Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interfa...

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Bibliographic Details
Main Author: Masamichi Suzuki
Format: Article
Language:English
Published: MDPI AG 2012-03-01
Series:Materials
Subjects:
LaAlO3
high-k
gate dielectrics
metal gate
MOSFET
schottky source/drain
EOT
direct contact
Online Access:http://www.mdpi.com/1996-1944/5/3/443/

Internet

http://www.mdpi.com/1996-1944/5/3/443/

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