Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications
The advancements in semiconductor technology greatly impact the growth of hybrid VLSI devices and components. The nanometer technology has been possibly executed due to the enhancement of the scaling factor of the MOSFETs. Since the MOSFETs play a vital role in building dense devices, it also has se...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9461001/ |