Epitaxial growth of higher transition-temperature VO2 films on AlN/Si
We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer a...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4940901 |