Preparation of Highly Transparent (at 450–800 nm) SnO<sub>2</sub> Homojunction by Solution Method and Its Photoresponse

Preparation of Highly Transparent (at 450–800 nm) SnO<sub>2</sub> Homojunction by Solution Method and Its Photoresponse

High-quality SnO<sub>2</sub>:Si films and SnO<sub>2</sub>:10 at.% Ga films were prepared by the solution method. The roughness of films is below 1.08 nm, and possess exceptional transparency (>75%) and decent semiconductor properties. Based on this, the SnO<sub>2<...

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Bibliographic Details
Main Authors: Qiannan Ye, Xu Zhang, Dong Guo, Wei Xu, Honglong Ning, Tian Qiu, Jinxiong Li, Danqing Hou, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Coatings
Subjects:
solution method
SnO2
homojunction
highly transparent
photoresponse
Online Access:https://www.mdpi.com/2079-6412/10/4/399

Internet

https://www.mdpi.com/2079-6412/10/4/399

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