Peculiarities of formation of implanted atom density distribution beyond ion range
Modeling of diffusion processes of implanted atoms in crystal and point defects, created by irradiation, beyond ion range is fulfilled. The processes of recombination of implanted atoms with thermal vacancy play the key role. It is shown, that a region strong depleted by vacancies beyond the ion ran...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2009-12-01
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| Series: | Âderna Fìzika ta Energetika |
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| Online Access: | http://jnpae.kinr.kiev.ua/10.4/Articles_PDF/jnpae-2009-10-0395-Sugakov.pdf |