A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications

A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications

This brief presents a 59.5 MHz negative resistance oscillator for high-temperature operation. The oscillator employs an in-house 4H-silicon carbide BJT, integrated with the required circuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from...

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Bibliographic Details
Main Authors: Muhammad Waqar Hussain, Hossein Elahipanah, John E. Zumbro, Saul Rodriguez, Bengt Gunnar Malm, Homer A. Mantooth, Ana Rusu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
4H-SiC BJT
high-temperature
LTCC
negative resistance
oscillator
Online Access:https://ieeexplore.ieee.org/document/8598934/

Internet

https://ieeexplore.ieee.org/document/8598934/

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