Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180° ferroelastic domain switching of the...

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Bibliographic Details
Main Authors: Zhi-Xue Xu, Jian-Min Yan, Meng Xu, Ting-Wei Chen, Lei Guo, Guan-Yin Gao, Xiao-Guang Li, Hao-Su Luo, Yu Wang, Ren-Kui Zheng
Format: Article
Language:English
Published: Elsevier 2018-12-01
Series:Journal of Materiomics
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847818301138

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http://www.sciencedirect.com/science/article/pii/S2352847818301138

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