Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180° ferroelastic domain switching of the...
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doaj-34bc6a22581148eebaae8a1fad1f7eff2020-11-25T00:02:22ZengElsevierJournal of Materiomics2352-84782018-12-0144412417Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructuresZhi-Xue Xu0Jian-Min Yan1Meng Xu2Ting-Wei Chen3Lei Guo4Guan-Yin Gao5Xiao-Guang Li6Hao-Su Luo7Yu Wang8Ren-Kui Zheng9State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, ChinaSchool of Materials Science and Engineering, Nanchang University, Nanchang, 330031, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; School of Physics, Southeast University, Nanjing, 211189, ChinaHefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, University of Science and Technology of China, Hefei, 230026, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, ChinaSchool of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China; Corresponding author.School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China; State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; Corresponding author. School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China.We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180° ferroelastic domain switching of the PMN-0.29 PT on the electronic properties of the GeTe films. The in-plane strain of the PMN-0.29 PT could be modulated continuously and reversibly by electric fields in a nonvolatile manner and could be effectively transferred to the GeTe films. Based on this, we realized reversible and nonvolatile resistance switching and obtained multilevel stable nonvolatile resistance states with good stability and endurance at T = 300 K by applying appropriate asymmetrical bipolar electric fields to the PMN-0.29 PT(111) substrates along the thickness direction. Such heterostructures may be used for multilevel data storage that allows each unit to store multiple bits of information and thus improve the memory density. Our investigation would be beneficial for the fabrication of nonvolatile memory devices using PMN-xPT-based heterostructures. Keywords: Ferroelastic strain, Electronic transport, PMN-PT, Heterostructure, Strain effecthttp://www.sciencedirect.com/science/article/pii/S2352847818301138 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Zhi-Xue Xu Jian-Min Yan Meng Xu Ting-Wei Chen Lei Guo Guan-Yin Gao Xiao-Guang Li Hao-Su Luo Yu Wang Ren-Kui Zheng |
spellingShingle |
Zhi-Xue Xu Jian-Min Yan Meng Xu Ting-Wei Chen Lei Guo Guan-Yin Gao Xiao-Guang Li Hao-Su Luo Yu Wang Ren-Kui Zheng Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures Journal of Materiomics |
author_facet |
Zhi-Xue Xu Jian-Min Yan Meng Xu Ting-Wei Chen Lei Guo Guan-Yin Gao Xiao-Guang Li Hao-Su Luo Yu Wang Ren-Kui Zheng |
author_sort |
Zhi-Xue Xu |
title |
Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures |
title_short |
Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures |
title_full |
Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures |
title_fullStr |
Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures |
title_full_unstemmed |
Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures |
title_sort |
ferroelastic-strain-induced multiple nonvolatile resistance states in gete/pb(mg1/3nb2/3)o3-pbtio3 heterostructures |
publisher |
Elsevier |
series |
Journal of Materiomics |
issn |
2352-8478 |
publishDate |
2018-12-01 |
description |
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180° ferroelastic domain switching of the PMN-0.29 PT on the electronic properties of the GeTe films. The in-plane strain of the PMN-0.29 PT could be modulated continuously and reversibly by electric fields in a nonvolatile manner and could be effectively transferred to the GeTe films. Based on this, we realized reversible and nonvolatile resistance switching and obtained multilevel stable nonvolatile resistance states with good stability and endurance at T = 300 K by applying appropriate asymmetrical bipolar electric fields to the PMN-0.29 PT(111) substrates along the thickness direction. Such heterostructures may be used for multilevel data storage that allows each unit to store multiple bits of information and thus improve the memory density. Our investigation would be beneficial for the fabrication of nonvolatile memory devices using PMN-xPT-based heterostructures. Keywords: Ferroelastic strain, Electronic transport, PMN-PT, Heterostructure, Strain effect |
url |
http://www.sciencedirect.com/science/article/pii/S2352847818301138 |
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