Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
Abstract Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is o...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2020-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-020-64958-6 |