Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation
Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA whil...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0016027 |