Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), str...

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Bibliographic Details
Main Authors: Yang Huang, Zhiqiang Liu, Xiaoyan Yi, Yao Guo, Shaoteng Wu, Guodong Yuan, JunXi Wang, Guohong Wang, Jinmin Li
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4948511

Internet

http://dx.doi.org/10.1063/1.4948511

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