Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics
The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher sel...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4938548 |