Investigation of The Numerical Solution for One Dimensional Drift-Diffusion Model in Silicon in Steady State
Abstract<br /> The drift-diffusion model is considered as one of the most important models which is used to describe the characteristics of semiconductor devices and can be applied to wide range of applications started from micro up to nano scale devices after applying the suitable correction...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | Arabic |
| Published: |
College of Education for Pure Sciences
2021-03-01
|
| Series: | مجلة التربية والعلم |
| Subjects: | |
| Online Access: | https://edusj.mosuljournals.com/article_166302_8ea7a8505417fdfc9971f83243fa5d27.pdf |