Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation
The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922267 |