A Nonvolatile Fast-Read Two-Transistor SRAM Based on Spintronic Devices
This paper proposes a compact nonvolatile three-terminal two-transistor spintronic memory cell with a fast-read operation. It is applicable to a variety of current-driven and voltage-controlled write mechanisms, such as spin diffusion, spin Hall effect, domain wall motion, and magnetoelectric effect...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8115219/ |