Spatially resolved dark count rate of SiPMs
Abstract In this work we present a novel method for the spatially resolved characterization of crystal defects in SiPMs. The contribution of crystal defects to the DCR is evaluated by exploiting the effect of “hot carrier luminescence” (HCL), which is light that is emitted during the Geiger mode ope...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-11-01
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| Series: | European Physical Journal C: Particles and Fields |
| Online Access: | http://link.springer.com/article/10.1140/epjc/s10052-018-6454-0 |