INFLUENCE OF SILICON WAFER CRYSTALLOGRAPHIC ORIENTATION ON ANODIZATION MECHANISM

INFLUENCE OF SILICON WAFER CRYSTALLOGRAPHIC ORIENTATION ON ANODIZATION MECHANISM

The influence of silicon wafer crystallographic orientation on the formation of porous silicon during anodization in an HF solution is studied. Cross-section SEM image comparison of samples with different crystallographic orientations has shown that (111) Si samples exhibit a more branching, tree-li...

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Bibliographic Details
Main Authors: N. L. Grevtsov, A. V. Klimenka, A. D. Hurbo, V. P. Bondarenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2020-03-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
silicon nanostructures
porous silicon
electrochemical etching
Online Access:https://doklady.bsuir.by/jour/article/view/2593

Internet

https://doklady.bsuir.by/jour/article/view/2593

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