CMOS-SOI-MEMS Uncooled Infrared Security Sensor With Integrated Readout

CMOS-SOI-MEMS Uncooled Infrared Security Sensor With Integrated Readout

A new generation of uncooled passive infrared (PIR) security sensors based on a suspended thermal transistor MOS (TMOS), fabricated in standard CMOS-SOI process, released by post-etching, and wafer level packaged achieving a vacuum of <;4 Pa, has been developed at the Technion. One of the imp...

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Bibliographic Details
Main Authors: Tomer Saraf, Igor Brouk, Sharon Bar-Lev Shefi, Aharon Unikovsky, Tanya Blank, Praveen Kumar Radhakrishnan, Yael Nemirovsky
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Infrared detectors
Thermal sensors
Integrated circuits
Sensor arrays
Semiconductor devices
Online Access:https://ieeexplore.ieee.org/document/7447662/

Internet

https://ieeexplore.ieee.org/document/7447662/

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