Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy
GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300°C to 800°C. Surface morphology and roughness annealed below or equal to 500°C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the a...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-10-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5005970 |