Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that cha...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0052596 |