The strain induced band gap modulation from narrow gap semiconductor to half-metal on Ti2CrGe: A first principles study
The Heusler alloy Ti2CrGe is a stable L21 phase with antiferromagnetic ordering. With band-gap energy (∼ 0.18 eV) obtained from a first-principles calculation, it belongs to the group of narrow band gap semiconductor. The band-gap energy decreases with increasing lattice compression and disappears u...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4936151 |