A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed....

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Bibliographic Details
Main Authors: Shuoben Hou, Muhammad Shakir, Per-Erik Hellstrom, Bengt Gunnar Malm, Carl-Mikael Zetterling, Mikael Ostling
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Silicon carbide (SiC)
image sensor
ultraviolet (UV)
photodiode
high temperature
bipolar junction transistor (BJT)
Online Access:https://ieeexplore.ieee.org/document/8959229/

Internet

https://ieeexplore.ieee.org/document/8959229/

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