Direct band-gap crossover in epitaxial monolayer boron nitride

Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications of the presence of a direct gap of energy 6.1 eV in...

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Bibliographic Details
Main Authors: C. Elias, P. Valvin, T. Pelini, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois
Format: Article
Language:English
Published: Nature Publishing Group 2019-06-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-10610-5