An Algebraic Model for the Recombination Rate in Semiconductors
This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introduced in a unique way. The methodology introduced here represents an interesting tool to evaluate c...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
1993-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1993/68260 |