An Algebraic Model for the Recombination Rate in Semiconductors

This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introduced in a unique way. The methodology introduced here represents an interesting tool to evaluate c...

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Bibliographic Details
Main Authors: M. A. Grado Caffaro, M. Grado Caffaro
Format: Article
Language:English
Published: Hindawi Limited 1993-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1993/68260