Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrati...

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Bibliographic Details
Main Authors: Chih-Chieh Hsu, Po-Tsun Liu, Kai-Jhih Gan, Dun-Bao Ruan, Simon M. Sze
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/9/2204