Individuality of Dopants in Silicon Nano-pn Junctions

Individuality of Dopants in Silicon Nano-pn Junctions

The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist. Recent studies demonstrated that individual dopants strongly affect the electrical characteristics of nanoscale transistors....

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Bibliographic Details
Main Authors: Daniel MORARU, Sri PURWIYANTI, Roland NOWAK, Takeshi MIZUNO, Arief UDHIARTO, Djoko HARTANTO, Ryszard JABLONSKI, Michiharu TABE
Format: Article
Language:English
Published: Kaunas University of Technology 2014-06-01
Series:Medžiagotyra
Subjects:
individual dopant
pn junction
nanoscale
silicon-on-insulator
random telegraph signal
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/6312

Internet

http://matsc.ktu.lt/index.php/MatSc/article/view/6312

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