Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT

Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT

The addition of a p-GaN drain to a conventional gate-injection transistor (GIT), forming the so-called hybrid drain embedded GIT, is crucial in the suppression of the dynamic Rdson. The DC leakage due to hole injection is limited to around 10 nA/mm at 600 V (25 °C). However, an injected hole current...

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Bibliographic Details
Main Authors: Jinming Sun, Oliver Haeberlen, Clemens Ostermaier, Gerhard Prechtl, Ramakrishna Tadikonda, Eric Persson, Reenu Garg, Mohamed Imam, Sameh Khalil, Alain Charles
Format: Article
Language:English
Published: AIP Publishing LLC 2021-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0049319

Internet

http://dx.doi.org/10.1063/5.0049319

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