Behavioral modeling of stressed MOSFET
In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of sp...
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| Format: | Article |
| Language: | English |
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Warsaw School of Computer Science
2015-12-01
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| Series: | Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki |
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| Online Access: | http://zeszyty-naukowe.wwsi.edu.pl/zeszyty/zeszyt13/Behavioral_modeling_of_stressed_MOSFET.pdf |