Electrical properties and current conduction mechanisms of LaGdO3 thin film by RF sputtering for RRAM applications
Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated. The influences of Ar/O2 ratio, film thickness, postannealing condition, and electrode on the RS properties were also studied...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2020-07-01
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| Series: | Journal of Asian Ceramic Societies |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/21870764.2020.1799913 |