Humidity sensor based on Gallium Nitride for real time monitoring applications

Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to w...

Full description

Bibliographic Details
Main Authors: Chaudhry Muhammad Furqan, Muhammad Umair Khan, Muhammad Awais, Fulong Jiang, Jinho Bae, Arshad Hassan, Hoi-Sing Kwok
Format: Article
Language:English
Published: Nature Publishing Group 2021-05-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-89956-0