Atomic Origin of Interface‐Dependent Oxygen Migration by Electrochemical Gating at the LaAlO3–SrTiO3 Heterointerface

Atomic Origin of Interface‐Dependent Oxygen Migration by Electrochemical Gating at the LaAlO3–SrTiO3 Heterointerface

Abstract Electrical control of material properties based on ionic liquids (IL) has seen great development and emerging applications in the field of functional oxides, mainly understood by the electrostatic and electrochemical gating mechanisms. Compared to the fast, flexible, and reproducible electr...

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Bibliographic Details
Main Authors: Dongsheng Song, Deqing Xue, Shengwei Zeng, Changjian Li, Thirumalai Venkatesan, Ariando Ariando, Stephen J. Pennycook
Format: Article
Language:English
Published: Wiley 2020-08-01
Series:Advanced Science
Subjects:
electrochemical gating
ionic liquid gating
LaAlO3/SrTiO3
oxygen migration
Online Access:https://doi.org/10.1002/advs.202000729

Internet

https://doi.org/10.1002/advs.202000729

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