Comparative Analysis of Semiconductor Power Losses of Galvanically Isolated Quasi-Z-Source and Full-Bridge Boost DC-DC Converters

Comparative Analysis of Semiconductor Power Losses of Galvanically Isolated Quasi-Z-Source and Full-Bridge Boost DC-DC Converters

This paper compares semiconductor losses of the galvanically isolated quasi-Z-source converter and full-bridge boost DC-DC converter with active clamping circuit. Operation principle of both converters is described. Short design guidelines are provided as well. Results of steady state analysis are u...

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Bibliographic Details
Main Authors: Kosenko Roman, Liivik Liisa, Chub Andrii, Velihorskyi Oleksandr
Format: Article
Language:English
Published: Sciendo 2015-07-01
Series:Electrical, Control and Communication Engineering
Subjects:
dc-dc power converters
energy efficiency
pulse width modulation converters
semiconductor device modeling
Online Access:https://doi.org/10.1515/ecce-2015-0001

Internet

https://doi.org/10.1515/ecce-2015-0001

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