Mn DOPING OF GaN LAYERS GROWN BY MOVPE
In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)2Mn was used as a Mn – precursor. The flow of the Mn...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Chemistry and Technology, Prague
2012-07-01
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| Series: | Ceramics-Silikáty |
| Subjects: | |
| Online Access: | http://www.ceramics-silikaty.cz/2012/pdf/2012_02_122.pdf |