Mn DOPING OF GaN LAYERS GROWN BY MOVPE

• Main Authors: Petr Šimek, Zdeněk Sofer, David Sedmidubský, Ondřej Jankovský, Jiří Hejtmánek, Miroslav Maryško, Michal Václavů, Martin Mikulics
• Format: Article
• Language: English
• Published: University of Chemistry and Technology, Prague 2012-07-01
• Series: Ceramics-Silikáty
• Subjects: Metalorganic vapor phase epitaxy; Nitrides; Magnetic materials; Semiconducting III -V materials
• Online Access: http://www.ceramics-silikaty.cz/2012/pdf/2012_02_122.pdf
• ISSN: 0862-5468; 1804-5847

In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)2Mn was used as a Mn – precursor. The flow of the Mn precursor was 0.2-3.2 μmol.min-1. The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar, the temperature 1050 °C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer’s properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.