Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by vertical electric fields in the source, channel, and...

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Bibliographic Details
Main Authors: Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Zhihong Chen, Rajib Rahman
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Bilayer graphene
electrostatically doping
tunnel field-effect transistor
Online Access:https://ieeexplore.ieee.org/document/7428769/

Internet

https://ieeexplore.ieee.org/document/7428769/

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