Simulation Studies of a Trench MOS Device Structure with Small Figures of Merit
We proposed a vertical high permittivity trench power MOS (HKTMOS) device with alternating N&P drift region and high permittivity (HK) trench sandwiched in between. The unique structure guarantees uniform potential distribution for wide voltage range at block state owing to both HK potential mod...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2018-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201820803005 |