Floating GaN whispering gallery mode micro-ring lasing with Burstein–Moss effect
A floating GaN micro-ring is fabricated by standard semiconductor technology. Under pump power conditions, ultraviolet lasing with a quality factor of 3600 is obtained. Resonant mode analysis indicates that the lasing spectra contain two types of whispering gallery modes and one type of Fabry–Perót...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-10-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0015222 |