Floating GaN whispering gallery mode micro-ring lasing with Burstein–Moss effect
A floating GaN micro-ring is fabricated by standard semiconductor technology. Under pump power conditions, ultraviolet lasing with a quality factor of 3600 is obtained. Resonant mode analysis indicates that the lasing spectra contain two types of whispering gallery modes and one type of Fabry–Perót...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-10-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0015222 |
Summary: | A floating GaN micro-ring is fabricated by standard semiconductor technology. Under pump power conditions, ultraviolet lasing with a quality factor of 3600 is obtained. Resonant mode analysis indicates that the lasing spectra contain two types of whispering gallery modes and one type of Fabry–Perót mode. With the increase in pumping power, the state filling induced Burstein–Moss effect is observed and understood through synchronous measurement of photoluminescence and time resolution photoluminescence spectra. |
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ISSN: | 2158-3226 |