Contact Resistance Parallel Model for Edge-Contacted 2D Material Back-Gate FET
Because 2D materials have adjust band gap, high mobility ratio, bipolar, anisotropy and flexibility characters, they have become the new direction for FET’s channel materials. According to the characteristics of the layers of 2D materials, the current transport characteristics can be improved by usi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/12/2110 |