A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

To better predict the high-frequency switching operation of the half-bridge circuit in power converters, the value of the parasitic elements of these devices must be accurately evaluated. A new MOSFET-based half-bridge circuit parasitic inductances extraction method using two-port S-parameters is pr...

Full description

Bibliographic Details
Main Authors: Rongqiang Zhong, Chuang Bi, Yong Chen, Zhangyong Chen, Anjian Zhou, Zhong Yang, Jun Zhai
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Parameter extraction
multi-terminal circuit
S-parameter
electromagnetic interference
Online Access:https://ieeexplore.ieee.org/document/9330505/

Internet

https://ieeexplore.ieee.org/document/9330505/

Similar Items