Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives

Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50%...

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Bibliographic Details
Main Authors: Jin Onuki, Kunihiro Tamahashi, Takashi Inami, Takatoshi Nagano, Yasushi Sasajima, Shuji Ikeda
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8304535/