Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives

Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50%...

Full description

Bibliographic Details
Main Authors:	Jin Onuki, Kunihiro Tamahashi, Takashi Inami, Takatoshi Nagano, Yasushi Sasajima, Shuji Ikeda
Format:	Article
Language:	English
Published:	IEEE 2018-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	High purity electrolyte nano-structure controlled Cu wire optimized additives low resistivity
Online Access:	https://ieeexplore.ieee.org/document/8304535/

id	doaj-3d73bc610daf4e6f8ed6e1a9c0ac39d4
record_format	Article
spelling	doaj-3d73bc610daf4e6f8ed6e1a9c0ac39d42021-03-29T18:46:25ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01650651110.1109/JEDS.2018.28084948304535Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized AdditivesJin Onuki0https://orcid.org/0000-0002-0361-5268Kunihiro Tamahashi1Takashi Inami2Takatoshi Nagano3Yasushi Sasajima4Shuji Ikeda5https://orcid.org/0000-0001-7643-5578Graduate School of Science and Technology, Ibaraki University, Hitachi, JapanGraduate School of Science and Technology, Ibaraki University, Hitachi, JapanGraduate School of Science and Technology, Ibaraki University, Hitachi, JapanGraduate School of Science and Technology, Ibaraki University, Hitachi, JapanGraduate School of Science and Technology, Ibaraki University, Hitachi, JapanTsukuba Reseach Laboratory, Tei Solutions, Tsukuba, JapanResistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.https://ieeexplore.ieee.org/document/8304535/High purity electrolytenano-structure controlled Cu wireoptimized additiveslow resistivity
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jin Onuki Kunihiro Tamahashi Takashi Inami Takatoshi Nagano Yasushi Sasajima Shuji Ikeda
spellingShingle	Jin Onuki Kunihiro Tamahashi Takashi Inami Takatoshi Nagano Yasushi Sasajima Shuji Ikeda Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives IEEE Journal of the Electron Devices Society High purity electrolyte nano-structure controlled Cu wire optimized additives low resistivity
author_facet	Jin Onuki Kunihiro Tamahashi Takashi Inami Takatoshi Nagano Yasushi Sasajima Shuji Ikeda
author_sort	Jin Onuki
title	Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
title_short	Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
title_full	Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
title_fullStr	Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
title_full_unstemmed	Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
title_sort	nano-structure-controlled very low resistivity cu wires formed by high purity and optimized additives
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2018-01-01
description	Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.
topic	High purity electrolyte nano-structure controlled Cu wire optimized additives low resistivity
url	https://ieeexplore.ieee.org/document/8304535/
work_keys_str_mv	AT jinonuki nanostructurecontrolledverylowresistivitycuwiresformedbyhighpurityandoptimizedadditives AT kunihirotamahashi nanostructurecontrolledverylowresistivitycuwiresformedbyhighpurityandoptimizedadditives AT takashiinami nanostructurecontrolledverylowresistivitycuwiresformedbyhighpurityandoptimizedadditives AT takatoshinagano nanostructurecontrolledverylowresistivitycuwiresformedbyhighpurityandoptimizedadditives AT yasushisasajima nanostructurecontrolledverylowresistivitycuwiresformedbyhighpurityandoptimizedadditives AT shujiikeda nanostructurecontrolledverylowresistivitycuwiresformedbyhighpurityandoptimizedadditives
_version_	1724196467162218496

Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives

Similar Items