A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET). The CS TFET “line-tunneling” current increases significantly w...

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Bibliographic Details
Main Authors: Aryan Afzalian, Gerben Doornbos, Tzer-Min Shen, Matthias Passlack, Jeff Wu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Semiconductor device modeling
semiconductor heterojunctions
tunnel transistors
quantum wires
quantum effect semiconductor devices
quantum theory
Online Access:https://ieeexplore.ieee.org/document/8539977/

Internet

https://ieeexplore.ieee.org/document/8539977/

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