Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation

Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation

In power converters, the fast switching of the power conversion components results in rapid changes in voltage and current, which results in oscillations and high-level electromagnetic interference (EMI), so the power components become a source of internal electromagnetic interference. Taking SiC Me...

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Bibliographic Details
Main Authors: Congwen Xu, Qishuang Ma, Ping Xu, Tongkai Cui
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Electronics
Subjects:
power converters
EMI
intelligent control
classical gate driver
interference sources
Online Access:https://www.mdpi.com/2079-9292/8/5/508

Internet

https://www.mdpi.com/2079-9292/8/5/508

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