Efficiency Improvement Using Thickness-Chirped Barriers in Blue InGaN Multiple Quantum Wells Light Emitting Diodes

Efficiency Improvement Using Thickness-Chirped Barriers in Blue InGaN Multiple Quantum Wells Light Emitting Diodes

The advantages of blue InGaN light-emitting diodes (LEDs) with thickness-chirped barriers in the active region have been investigated by using the Crosslight APSYS programs. The results show that the output power of the proposed LED is increased 80% and the efficiency droop is decreased from 59% in...

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Bibliographic Details
Main Authors: Wu Tian, Jun Zhang, Zhujuan Wang, Feng Wu, Yang Li, Shengchang Chen, Jin Xu, Jiangnan Dai, Yanyan Fang, Zhihao Wu, Changqing Chen
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
InGaN light-emitting diode (LED)
thickness-chirped barriers
efficiency droop
Crosslight
Online Access:https://ieeexplore.ieee.org/document/6645412/

Internet

https://ieeexplore.ieee.org/document/6645412/

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